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nx-series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts CM100MXA-24S 1 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: cibs are low profile and thermally efficient. each module consists of a three-phase diode converter sec - tion, a three-phase inverter section and a brake circuit. a thermistor is included in the package for sens - ing the baseplate temperature. 6th generation cstbt chips yield low loss. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM100MXA-24S is a 1200v (v ces ), 100 ampere cib power module. type current rating v ces amperes volts (x 50) cm 100 24 outline drawing and circuit diagram dimensions inches millimeters a 4.79 121.7 b 2.44 62.0 c 0.51 13.0 d 4.49 114.05 e 4.330.02 110.00.5 f 3.89 99.0 g 3.72 94.5 h 0.16 4.06 j 0.51 13.09 k 0.15 3.81 l 0.45 11.43 m 0.9 22.86 n 0.22 dia. 5.5 dia. p 2.13 54.2 q 1.53 39.0 r 1.970.02 50.00.5 s 2.26 57.5 t 0.30 7.75 u 0.102 dia. 2.6 dia. dimensions inches millimeters v 0.088 dia. 2.25 dia. w 0.46 11.66 x 0.16 4.2 y 0.59 15.0 z 0.27 7.0 aa 0.81 20.5 ab 0.67 17.0 ac 0.12 3.0 ad 0.14 3.5 ae 0.03 0.8 af 0.15 3.75 ag 0.05 1.15 ah 0.025 0.65 aj 0.29 7.4 ak 0.05 1.2 al 0.49 12.5 am 0.12 3.0 an 0.17 dia. 4.3 dia. p1(48-49) t (9-1 0) p(54-56) n(59-61) co n vdi s (5-6) r (1 -2) gwn(31) e(32) gwp(23) gvn(33) gvp(1 8) fwdi gun(40) e*(39) gup(1 3) clampdi u(1 4-1 5) b(52-53) v(1 9-20) w(24-25) gb(41) n1(44-45) th 1 (29) th 2 (28) ntc c aution: each (t wo or three) pin ter minal of p/n/p1/n1/u/v/w/b/r/s/t is connect ed in the module , ho we ve r, all thr ee pins should be used f or ex te r nal wir ing . det ail "b" a aa j p d e f k km k k k g k k ll l h ag k ah ak aj z c ab r b al y k k l n (4 pla ces) ac k k k k k k k t ad w x l k k k k ll ll ae af v am u an k q s det ail "b" det ail "a" det ail "a" 12 34 56 78 91 01 11 21 31 41 51 61 71 81 92 02 12 2 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 t olerance otherwise specif ied (mm) the t olerance of siz e bet ween te r minals is assumed to 0.4 division of dimension t olerance 0.5 to 3 0.2 ov er 3 to 6 0.3 ov er 6 to 30 0.5 ov er 30 to 1 20 0.8 ov er 1 20 to 400 1 .2
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 2 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 119c) *2,*4 i c 100 amperes collector current (pulse, repetitive) *3 i crm 200 amperes total power dissipation (t c = 25c) *2,*4 p tot 750 watts emitter current *2 i e *1 100 amperes emitter current (pulse, repetitive) *3 i erm *1 200 amperes maximum junction temperature, instantaneous event (overload) t j(max) 175 c brake part igbt/clampdi characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 125c) *2,*4 i c 50 amperes collector current (pulse, repetitive) *3 i crm 100 amperes total power dissipation (t c = 25c) *2,*4 p tot 425 watts repetitive peak reverse voltage (v ge = 0v) v rrm 1200 volts forward current *2 i f *1 50 amperes forward current (pulse, repetitive) *3 i frm *1 100 amperes maximum junction temperature, instantaneous event (overload) t j(max) 175 c *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 1 7. 5 20.0 18.1 31.2 32.6 47.0 48.0 15.2 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp di cr*p / cr*n (* = r/s/t): conv di th: ntc thermistor 0 24.5 18.2 0 33.9 26.0 71.8 82.9 93.0 102.3 46.8 36.4 62.9 72.1 81.3 90.5 99.8 109.1 26.8 26.0 24.6 35.7 43.1 46.7 110.9 tr br di br di un di vn di wn tr un tr vn tr wn tr wp th cr rn cr sn cr tn cr rp cr sp cr tp di wp di vp tr vp di up tr up
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 3 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed converter part convdi characteristics symbol rating units repetitive peak reverse voltage (v ge = 0v) v rrm 1600 volts recommended ac input voltage (rms) e a 480 volts dc output current (3-phase full wave rectifying, t c = 125c) *4 i o 100 amperes surge forward current (sine half wave 1 cycle peak value, f = 60hz, non-repetative) i fsm 1000 amperes current square time (value for one cycle of surge current) i 2 t 4160 a 2 s maximum junction temperature, instantaneous event (overload) t j(max) 150 c module characteristics symbol rating units isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 2500 volts maximum case temperature *4 t c(max) 125 c operating junction temperature, continuous operation (under switching) t j(op) -40 to +150 c storage temperature t stg -40 to +125 c *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 1 7. 5 20.0 18.1 31.2 32.6 47.0 48.0 15.2 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp di cr*p / cr*n (* = r/s/t): conv di th: ntc thermistor 0 24.5 18.2 0 33.9 26.0 71.8 82.9 93.0 102.3 46.8 36.4 62.9 72.1 81.3 90.5 99.8 109.1 26.8 26.0 24.6 35.7 43.1 46.7 110.9 tr br di br di un di vn di wn tr un tr vn tr wn tr wp th cr rn cr sn cr tn cr rp cr sp cr tp di wp di vp tr vp di up tr up
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 4 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed inverter part igbt/fwdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 10ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c *6 1.80 2.25 volts (terminal) i c = 100a, v ge = 15v, t j = 125c *6 2.00 volts i c = 100a, v ge = 15v, t j = 150c *6 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 100a, v ge = 15v, t j = 25c *6 1.70 2.15 volts (chip) i c = 100a, v ge = 15v, t j = 125c *6 1.90 volts i c = 100a, v ge = 15v, t j = 150c *6 1.95 volts input capacitance c ies 10 nf output capacitance c oes v ce = 10v, v ge = 0v 2.0 nf reverse transfer capacitance c res 0.17 nf gate charge q g v cc = 600v, i c = 100a, v ge = 15v 233 nc turn-on delay time t d(on) 300 ns rise time t r v cc = 600v, i c = 100a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 6.2?, inductive load 600 ns fall time t f 300 ns emitter-collector voltage v ec *1 i e = 100a, v ge = 0v, t j = 25c *6 1.80 2.25 volts (terminal) i e = 100a, v ge = 0v, t j = 125c *6 1.80 volts i e = 100a, v ge = 0v, t j = 150c *6 1.80 volts emitter-collector voltage v ec *1 i e = 100a, v ge = 0v, t j = 25c *6 1.70 2.15 volts (chip) i e = 100a, v ge = 0v, t j = 125c *6 1.70 volts i e = 100a, v ge = 0v, t j = 150c *6 1.70 volts reverse recovery time t rr *1 v cc = 600v, i e = 100a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 6.2?, inductive load 5.3 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 100a, 8.6 mj turn-off switching energy per pulse e off v ge = 15v, r g = 6.2?, 10.7 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 10.2 mj internal lead resistance r cc' + ee' main terminals-chip, 3.5 m? per switch,t c = 25c *4 internal gate resistance r g per switch 0 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 pulse width and repetition rate should be such as to cause negligible temperature rise. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 1 7. 5 20.0 18.1 31.2 32.6 47.0 48.0 15.2 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp di cr*p / cr*n (* = r/s/t): conv di th: ntc thermistor 0 24.5 18.2 0 33.9 26.0 71.8 82.9 93.0 102.3 46.8 36.4 62.9 72.1 81.3 90.5 99.8 109.1 26.8 26.0 24.6 35.7 43.1 46.7 110.9 tr br di br di un di vn di wn tr un tr vn tr wn tr wp th cr rn cr sn cr tn cr rp cr sp cr tp di wp di vp tr vp di up tr up
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 5 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed brake part igbt/clampdi characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 5ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v, t j = 25c *6 1.80 2.25 volts (terminal) i c = 50a, v ge = 15v, t j = 125c *6 2.00 volts i c = 50a, v ge = 15v, t j = 150c *6 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 50a, v ge = 15v, t j = 25c *6 1.70 2.15 volts (chip) i c = 50a, v ge = 15v, t j = 125c *6 1.90 volts i c = 50a, v ge = 15v, t j = 150c *6 1.95 volts input capacitance c ies 5.0 nf output capacitance c oes v ce = 10v, v ge = 0v 1.0 nf reverse transfer capacitance c res 0.08 nf gate charge q g v cc = 600v, i c = 50a, v ge = 15v 117 nc turn-on delay time t d(on) 300 ns rise time t r v cc = 600v, i c = 50a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 13?, inductive load 600 ns fall time t f 300 ns forward voltage v f i e = 50a, v ge = 0v, t j = 25c *6 1.80 2.25 volts (terminal) i e = 50a, v ge = 0v, t j = 125c *6 1.80 volts i e = 50a, v ge = 0v, t j = 150c *6 1.80 volts forward voltage v f i e = 50a, v ge = 0v, t j = 25c *6 1.70 2.15 volts (chip) i e = 50a, v ge = 0v, t j = 125c *6 1.70 volts i e = 50a, v ge = 0v, t j = 150c *6 1.70 volts reverse recovery time t rr v cc = 600v, i e = 50a, v ge = 15v 300 ns reverse recovery charge q rr r g = 13?, inductive load 2.7 c turn-on switching energy per pulse e on v cc = 600v, i c = i e = 50a, 5.5 mj turn-off switching energy per pulse e off v ge = 15v, r g = 13?, 5.3 mj reverse recovery energy per pulse e rr t j = 150c, inductive load 4.5 mj internal gate resistance r g 0 ? *6 pulse width and repetition rate should be such as to cause negligible temperature rise.
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 6 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) converter part convdi characteristics symbol test conditions min. typ. max. units repetitive peak reverse current i rrm v r = v rrm , t j = 150c 20 ma forward voltage v f i f = 100a *6 1.28 1.8 volts (terminal) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *4 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c *4 , r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *7 3375 k power dissipation p 25 t c = 25c *4 10 mw thermal resistance characteristics thermal resistance, junction to case *4 r th(j-c) q per inverter igbt 0.20 k/w thermal resistance, junction to case *4 r th(j-c) d per inverter fwdi 0.29 k/w thermal resistance, junction to case *4 r th(j-c) q per brake igbt 0.35 k/w thermal resistance, junction to case *4 r th(j-c) d per brake clampdi 0.63 k/w thermal resistance, junction to case *4 r th(j-c) d per converter convdi 0.24 k/w contact thermal resistance, r th(c-f) thermal grease applied, 15 k/kw case to heatsink *4 per 1 module *8 *4 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 pulse width and repetition rate should be such as to cause negligible temperature rise. *7 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *8 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 53 54 55 56 57 58 59 60 61 30 29 28 27 26 25 24 23 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 0 0 1 7. 5 20.0 18.1 31.2 32.6 47.0 48.0 15.2 label side each mark points to the center position of each chip. tr*p / tr*n / trbr (* = u/v/w): igbt di*p / di*n (* = u/v/w): fwdi dibr: clamp di cr*p / cr*n (* = r/s/t): conv di th: ntc thermistor 0 24.5 18.2 0 33.9 26.0 71.8 82.9 93.0 102.3 46.8 36.4 62.9 72.1 81.3 90.5 99.8 109.1 26.8 26.0 24.6 35.7 43.1 46.7 110.9 tr br di br di un di vn di wn tr un tr vn tr wn tr wp th cr rn cr sn cr tn cr rp cr sp cr tp di wp di vp tr vp di up tr up
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 7 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com mechanicalcharacteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units mounting torque m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 6.47 mm terminal to baseplate 14.27 mm clearance d a terminal to terminal 6.47 mm terminal to baseplate 12.33 mm weight m 300 g flatness of baseplate e c on centerline x, y *5 0 100 m recommended operating conditons, t a = 25c dc supply voltage v cc applied across p-n/p1-n1 terminals 600 850 volts gate-emitter drive voltage v ge(on) applied across gb-es1/ 13.5 15.0 16.5 volts g*p-*/g*n-es (* = u, v, w) terminals external gate resistance r g per switch inverter igbt 6.2 62 ? per switch brake igbt 13 130 ? *5 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. ? : concave + : convex ? : concave x y + : convex mounting side mounting side mounting side
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 8 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter saturation voltage characteristics (inverter part - typical) t j = 25c i c = 200a i c = 100a i c = 40a v ge = 20v 10 11 12 13.5 9 t j = 25 c 15 t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) 0 0.5 1.0 2.0 1.5 3.0 2.5 10 0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 10 6 8 10 14 12 16 18 20 8 6 4 2 0 collector-emitter voltage, v ce , (volts) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 200 150 175 25 50 75 100 125 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (inverter part - typical) 3.5 3.0 0 2.0 2.5 1.0 1.5 0.5 0 200 150 175 75 100 125 25 50 gate-emitter voltage, v ge , (volts)
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 9 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, (ns) collector-emitter voltage, v ce , (volts) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 2 10 1 10 0 10 -1 10 -2 10 1 10 -1 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (inverter part - typical) 10 2 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (inverter part - typical) 10 2 external gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time vs. gate resistance (inverter part - typical) 10 2 v ge = 0v c ies c oes c res t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 6.2 t j = 150c inductive load t f t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load t f t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 100a t j = 125c inductive load t f
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 10 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com external gate resistance, r g , (?) 10 3 10 0 10 1 10 2 10 1 switching time vs. gate resistance (inverter part - typical) 10 2 gate charge, q g , (nc) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 250 200 150 100 50 emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 0 10 1 10 2 10 1 10 2 emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 0 10 1 10 2 10 1 10 2 switching time, (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 100a t j = 150c inductive load t f i c = 100a v cc = 600v v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load i rr t rr v cc = 600v v ge = 15v r g = 6.2 t j = 150c inductive load i rr t rr
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 11 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) gate resistance, r g , (?) 10 2 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (inverter part - typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 0 10 1 10 0 10 -1 10 2 half-bridge switching characteristics (inverter part - typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 2 10 1 10 0 10 1 10 0 10 -1 10 2 half-bridge switching characteristics (inverter part - typical) gate resistance, r g , (?) 10 2 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (inverter part - typical) v cc = 600v v ge = 15v i c = 100a t j = 150c inductive load v cc = 600v v ge = 15v r g = 6.2 t j = 150c inductive load e on e off e rr e on e off e rr v cc = 600v v ge = 15v r g = 6.2 t j = 125c inductive load e on e off e rr v cc = 600v v ge = 15v i c = 100a t j = 125c inductive load e on e off e rr
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 12 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') collector-emitter saturation voltage, v ce(sat) , (volts ) forward voltage, v f , (volts) switching time, (ns) time, (s) transient thermal impedance characteristics (inverter part - maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (brake part - typical) 3.5 3.0 0 2.0 2.5 0.5 1.5 1.0 100 75 25 50 0.5 1.5 2.0 1.0 2.5 10 0 10 1 forward current i f , (amperes) free-wheel diode forward characteristics (brake part - typical) 10 2 collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 1 half-bridge switching characteristics (brake part - typical) 10 2 single pulse t c = 25c per unit base = r th(j-c) = 0.20k/w (igbt) r th(j-c) = 0.29k/w (fwdi) 0 t j = 25c t j = 125c t j = 150c 10 0 t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 13 t j = 125c inductive load t f t j = 25c t j = 125c t j = 150c
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 13 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector current, i c , (amperes) 10 3 10 0 10 1 10 2 10 0 10 1 half-bridge switching characteristics (brake part - typical) 10 2 external gate resistance, r g , (?) 10 3 10 1 10 2 10 2 10 1 switching time vs. gate resistance (brake - typical) 10 3 external gate resistance, r g , (?) 10 3 10 1 10 2 10 2 10 1 switching time vs. gate resistance (brake - typical) 10 3 collector current, i c , (amperes) forward current, i f , (amperes) 10 1 10 0 10 1 10 0 10 -1 10 2 half-bridge switching characteristics (brake part - typical) switching time, (ns) switching time, (ns) switching time, (ns) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 13 t j = 150c inductive load t f t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 50a t j = 150c inductive load t f t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 50a t j = 125c inductive load t f v cc = 600v v ge = 15v r g = 13 t j = 125c inductive load e on e off e rr
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 14 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com half-bridge switching characteristics (brake part - typical) half-bridge switching characteristics (brake part - typical) external gate resistance, r g , (?) 10 2 10 1 10 2 10 1 10 0 10 3 external gate resistance, r g , (?) 10 2 10 1 10 2 10 1 10 0 10 3 collector current, i c , (amperes) forward current, i f , (amperes) 10 1 10 0 10 1 10 0 10 2 half-bridge switching characteristics (brake part - typical) 10 -1 forward current, i f , (amperes) reverse recovery characteristics (brake part - typical) 10 3 10 0 10 1 10 2 10 1 10 2 switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) reverse recovery, i rr (a), t rr (ns) v cc = 600v v ge = 15v i c /i f = 50a t j = 125c inductive load e on e off e rr v cc = 600v v ge = 15v i c /i f = 50a t j = 125c inductive load e on e off e rr v cc = 600v v ge = 15v r g = 13 t j = 150c inductive load e on e off e rr v cc = 600v v ge = 15v r g = 13 t j = 125c inductive load i rr t rr
CM100MXA-24S nx -series cib module (3 ? converter + 3 ? inverter + brake) 100 amperes/1200 volts 15 03/13 rev. 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (brake part - maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 single pulse t c = 25c per unit base = r th(j-c) = 0.35k/w (igbt) r th(j-c) = 0.63k/w (fwdi) forward current, i f , (amperes) reverse recovery characteristics (brake part - typical) 10 3 10 0 10 1 10 2 10 1 10 2 v cc = 600v v ge = 15v r g = 13 t j = 150c inductive load i rr t rr z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') reverse recovery, i rr (a), t rr (ns) normalized transient thermal impedance, z th(j-c') time, (s) transient thermal impedance characteristics (converter part - maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.24k/w 0.4 0.6 1.0 1.2 0.8 1.6 1.4 10 1 forward voltage, v f , (volts) free-wheel diode forward characteristics (converter part - typical) 10 2 forward current i f , (amperes) t j = 25c t j = 125c

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